sbr is a registered tr ademark of diodes incorporated. DFBR030U3LP document number: ds35994 rev. 8 - 2 1 of 8 www.diodes.com june 2015 ? diodes incorporated DFBR030U3LP advanced information advanced information 3.0a sbr ? full bridge rectifier features ? dual 30v n - channel mosfet s (q1, q2) with d ual 3.0a super barrier rectifier d iode s (d1, d2) packaged in a 4.0 x 4.0 x 0.6mm dfn package ? full - bridge rectifier block ? super barrier rectifiers (d1, d2) ? ultra low forward voltage drop ? patented super barrier rectifier technology ? + 150 c operating temperature ? 8 kv esd protection (hbm, 3b) ? 25kv esd protection (iec61000 - 4 - 2 level 4, air discharge) ? n - channel mosfet (q1, q2) ? low on - resistance to minimize conduction loss ? low gate threshold voltage ? low input capacitance ? fast switching speed ? low input/output leakage ? totally lead - free & fully rohs c ompliant (note s 1 & 2 ) ? halogen and antimony free. green device (note 3) mechanical data ? case: u - d fn 4040 - 8 ? case material: molded plastic, green molding compound ; ul flammability classification rating 94v - 0 ? moisture sensitivity: level 1 per j - std - 020 ? terminals: nipdau over copper l eadframe (lead - free plating ) ; solderable per mil - std - 202, method 208 ? terminal connections: see diagram ? weight: 0.031 grams applications ? wireless charging ? ac - dc rectification ? optimized for power management applications for portable products ordering information ( note 4) part number compliance case packaging DFBR030U3LP - 13 standard u - d fn 404 0 - 8 4,000/tape & reel note s: 1 . no purposely added lead. fully eu directive 2002/95/ec (rohs) & 2011/65/eu (rohs 2) compliant. 2. see http://www.diodes.com/quality/lead_free.html for more information about diodes incorporateds definitions of hal ogen - and antimony - free, "green" and lead - f ree . 3. halogen - and antimony - free "green products are defined as those which contain <900ppm bromine, <900ppm chlorine (< 1500ppm total br + cl) and <1000ppm antimony compounds. 4. for packaging det ails, go to our website at http: //www.diodes.com/products/packages.html . marking information top view pin configuration device schematic (dual channel) fb302 = product type marking code yyww = date code marking yy = last digit of year (ex: 1 5 for 201 5 ) ww = week code (01 to 53) u - d fn 4040 - 8 u - d fn 4040 - 8 fb302 yyww e4 v out l1_1 gnd1 gnd1 gnd2 gnd2 v out l1_2 v out l 1 _ 1 l 1 _ 2 v out l1_1 gnd1 gnd2 l1_2 d1 q1 d2 q2
sbr is a registered tr ademark of diodes incorporated. DFBR030U3LP document number: ds35994 rev. 8 - 2 2 of 8 www.diodes.com june 2015 ? diodes incorporated DFBR030U3LP advanced information advanced information maximum ratings C d1, d2 (@ t a = +25c, unless otherwise specified.) single phase, half wave, 60hz, resistive or inductive load. for capacitance load, derate current by 20%. characteristic symbol value unit peak repetitive reverse voltage working peak reverse voltage dc blocking voltage v rrm v rwm v rm 30 v rms reverse voltage v r(rms) 21 v average rectified output current (see figure 1) i o 3 .0 a non - repetitive peak forward surge current 8.3ms single half sine - wave superimposed on rated load i fsm 20 a maximum ratings C q1, q2 (@ t a = +25c, unless otherwise specified.) characteristic symbol value units input voltage b etween t wo mosfet d rain v ll 3 0 v drain - source voltage v dss 30 v gate - source voltage v gss ? d 3.2 a thermal characteristics characteristic symbol value unit power dissipation (note 5) p d 500 mw thermal resistance, junction to ambient air (note 5) r ja 250 c/w power dissipation (note 6) p d 1000 mw thermal resistance, junction to ambient air (note 6) r ja 125 c/w operating and storage temperature range t j, t stg - 55 to +150 c electrical characteristics C d1, d2 ( @ t a = + 25c , unless otherwise specified .) characteristic symbol min typ max unit test condition reverse breakdown voltage (note 7 ) v (br)r 30 v i r = 400 a forward voltage drop v f f = 0.1a, t j = + 25 c 0.3 3 0.3 7 i f = 1.0a, t j = +25c 0.36 0.4 2 i f = 2.0a, t j = +25c 0. 24 0. 27 i f = 0.1a, t j = +125c 0. 33 0. 36 i f = 1.0a, t j = +125c 0.3 5 0. 40 i f = 2.0a, t j = +125c leakage current (note 7 ) i r 50 150 a v r = 5v, t j = +25c 1 0 0 400 a v r = 30v, t j = +25c 6 15 ma v r = 5v, t j = +125c 1 0 20 ma v r = 30v, t j = +125c notes: 5. part mounted on fr - 4 board with recommended pad layout, which can be found on our website at http://www.diodes.com . 6. part mounted on fr - 4 board with 1 - in sq pad layout, 2 oz cu. 7 . short duration pulse test used to minimize self - heating effect. pulse width 300s, duty cycle 2%.
sbr is a registered tr ademark of diodes incorporated. DFBR030U3LP document number: ds35994 rev. 8 - 2 3 of 8 www.diodes.com june 2015 ? diodes incorporated DFBR030U3LP advanced information advanced information electrical characteristics C q1, q2 (@ t a = +25c, unless otherwise specified.) characteristic symbol min typ max unit test condition off characteristics (note 7 ) drain - source breakdown voltage bv dss 30 ? ? gs = 0v, i d = 250 a zero gate voltage drain current i dss ? ? ds = 30v, v gs = 0v gate - source leakage i gss ? ? ? gs = ? ds = 0v on characteristics (note 7 ) gate threshold voltage v gs(th) 1 ? ds = v gs , i d = 250 a static drain - source on - resistance r ds(on) ? -- 26 -- 32 m ? gs = 10v, i d = 2.0 a v gs = 10v, i d = 3.2 a v gs = 4.5v, i d = 2 .0a v gs = 4.5v, i d = 3. 2 a forward transconductance g fs ? ? ds = 1 5v, i d = 2.0 a diode forward voltage (note 7 ) v sd 0.5 ? gs = 0v, i s = 2.25 a electrical characteristics C df br 030u 3 lp (@ t a = +25c, unless otherwise specified.) characteristic symbol min typ max unit test condition rectifying forward voltage (note 7 ) v fd2 ? ll = 5v; the output current of rectifier i out = 2a rectifier leakage current i leak ? ll = 16v; no load on the rectifier output rectifier reverse leakage current i rleak ? ll = 0v; the output voltage of the rectifier v out = 5v note: 7. short duration pulse test used to minimize self - heating effect. pulse width 300s, duty cycle 2%.
sbr is a registered tr ademark of diodes incorporated. DFBR030U3LP document number: ds35994 rev. 8 - 2 4 of 8 www.diodes.com june 2015 ? diodes incorporated DFBR030U3LP advanced information advanced information typical performance curve s C d1, d2 0 0.2 0.4 0.6 0.8 1 1.2 i , average forward current (a) f(av) figure 1 forward power dissipation p , p o w e r d i s s i p a t i o n ( w ) d 0 0.5 1 1.5 2 2.5 0.1 1 10 100 1,000 10,000 v , instantaneous forward voltage (v) f figure 2 typical forward characteristics i , i n s t a n t a n e o u s f o r w a r d c u r r e n t ( m a ) f 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 t =25 c a t = -65 c a t =100 c a t =150 c a 100ma 0 5 10 15 20 25 30 v , instantaneous reverse voltage (v) r figure 3 typical reverse characteristics i , i n s t a n t a n e o u s r e v e r s e c u r r e n t r t =100 c a t =150 c a t =25 c a t = -65 c a 10ma 1ma 100a 10a 1a 100na 10na 100 1,000 10,000 0 5 10 15 20 25 30 v , dc reverse voltage (v) r figure 4 total capacitance vs. reverse voltage c , t o t a l c a p a c i t a n c e ( p f ) t f = 1.0mhz
sbr is a registered tr ademark of diodes incorporated. DFBR030U3LP document number: ds35994 rev. 8 - 2 5 of 8 www.diodes.com june 2015 ? diodes incorporated DFBR030U3LP advanced information advanced information typical performance curve s C q1, q2 figure 5 typical output characteristics v , drain-source voltage (v) ds 0 2 4 6 8 10 12 0 0.5 1.0 1.5 2.0 2.5 3.0 v = 1.5v gs v = 2.5v gs v = 4.5v gs v = 10v gs v = 3.0v gs v , gate source voltage (v) gs figure 6 typical transfer characteristics i , d r a i n c u r r e n t ( a ) d 0 2 4 6 8 10 1 1.5 2 2.5 3 3.5 4 v = 5v ds t = -55c a t = 25c a t = 125c a t = 150c a t = 85c a i , drain current (a) d figure 7 typical on-resistance vs. drain current and gate voltage r , d r a i n - s o u r c e o n - r e s i s t a n c e ( ) d s ( o n ) ? 0.01 0.1 0 2 4 6 8 10 v = 10v gs v = 4.5v gs i , drain current (a) figure 8 typical drain-source on-resistance vs. drain current and temperature d r , d r a i n - s o u r c e o n - r e s i s t a n c e ( ) d s ( o n ) ? 0.01 0.1 0 2 4 6 8 10 t = -55c a t = 25c a t = 85c a t = 125c a t = 150c a -50 -25 0 25 50 75 100 125 150 t , junction temperature (c) j figure 9 on-resistance variation with temperature r , d r a i n - t o - s o u r c e r e s i s t a n c e ( ) d s ( o n ) ? 0.010 0.020 0.030 0.040 0.050 0.060 v = 4.5v i = 5a gs d v = 10v i = 6.9a gs d v , source-drain voltage (v) sd figure 10 diode forward voltage vs. current i , s o u r c e c u r r e n t ( a ) s 0.01 0.1 1 10 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 t = -55c a t = 25c a t = 85c a t = 125c a t = 150c a
sbr is a registered tr ademark of diodes incorporated. DFBR030U3LP document number: ds35994 rev. 8 - 2 6 of 8 www.diodes.com june 2015 ? diodes incorporated DFBR030U3LP advanced information advanced information 0.01 25 35 45 55 65 75 85 95 105 115 125 t , junction temperature (c) figure 11 output leakage at 5v bias vs. junction temperature j 0.1 1 10 o u t p u t l e a k a g e ( m a ) 0.01 25 35 45 55 65 75 85 95 105 115 125 t , temperature (c) figure 12 input leakage at 16v bias vs. junction temperature j junction 0.1 1 10 i , o u t p u t l e a k a g e ( m a ) l e a k 0 10 20 30 40 50 60 70 80 3 4 5 6 7 8 9 10 r ( m ) d s ( o n ) ? v (v) figure 13 fet typical on-resistance vs. gate-to-source voltage (from 3v to 10v) gs i = 2a d v out l1_1 gnd1 gnd2 l1_2 d1 q1 d2 q2 a c i n p u t d c o u t p u t figure 14 typical application circuit gnd1 and gnd2 are not internally connected. the user should make the connection in the pcb design.
sbr is a registered tr ademark of diodes incorporated. DFBR030U3LP document number: ds35994 rev. 8 - 2 7 of 8 www.diodes.com june 2015 ? diodes incorporated DFBR030U3LP advanced information advanced information package outline dimensions please see ap02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version. suggested pad layout please see ap02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. u - dfn4040 - 8 dim min max typ a 0.57 0.63 0.60 a1 0 0.05 0.02 a3 - - 0.15 b 0.20 0.30 0.25 d 3.95 4.05 4.00 d1 2.05 2.25 2.15 d2 0.90 1.10 1.00 e 3.95 4.05 4.00 e1 1.00 1.20 1.10 e2 2.50 2.70 2.60 e - - 0.80 l 0.35 0.45 0.40 z - - 0.675 all dimensions in mm dimensions value (in mm) c 0.800 x 0.350 x1 1.150 x2 1.100 x3 2.250 x4 2.750 x5 3.650 y 0.600 y1 2.700 y2 1.200 y3 2.700 y4 4.300 d d 2 e e 2 a a 1 a 3 (pin #1 id) seating plane z b e d 1 e 1 d 1 e 1 l x c y x 5 x 3 y 2 x 3 y 2 y 1 x 2 x1 c-0.279 y 3 y 4 x 4 x 1 1
sbr is a registered tr ademark of diodes incorporated. DFBR030U3LP document number: ds35994 rev. 8 - 2 8 of 8 www.diodes.com june 2015 ? diodes incorporated DFBR030U3LP advanced information advanced information important notice diodes incorporated makes no warranty of any kind, express or implied, with regards to this document, including, but not limited to, the implied warranties of merchantability and fitness for a particular purpose (and their equivalents under the laws of any jurisdiction). diodes incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. diodes incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does diodes incorporated convey any license unde r its patent or trademark rights, nor the rights of others. any customer or user of t his document or products described herein in such applications shall assume all risks of such use and will agree to hold diodes incorporated and all the companies whose products are represented on diod es incorporated website, harmless against all damages. diodes incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthor ized sales channel. should customers purchase or use diodes incorporated products for any unintended or unauthorized application , customers shall indemnify and hold diodes incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising ou t of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. products described herein may be covered by one or more united states, international or foreign patents pending. product names and markings noted herein may also be covered by one or more united states, international or fore ign trademarks. this document is written in english but may be translated into multiple languages for reference. only the english version of this document is the final and determinative format released by diodes incorporated. life support diodes incorp orated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the chief executive officer of diodes incorporated. as used herein: a. life support devices or syst ems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided i n the labeling can be reasonably expected to result in significant injury to the user. b. a critical component is any component in a life support device or system whose failure to perform can be reasonably expe cted to cause the failure of the life support device or to affect its safety or effectiveness. customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support d evices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safe ty - related requirements concerning their products and any use of diodes incorporated products in such safety - critical, life support devices or systems, notwithstanding any devices - or systems - related information or support that may be provided by diodes in corporated. further, customers must fully indemnify diodes incorporated and its representatives against any damages arising out of the use of diodes incorporated products in such safety - critical, life support devices or systems. copyright ? 2015 , dio des incorporated www.diodes.com
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